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The IGP20N65F5 is a high-speed fifth-generation IGBT utilizing TRENCHSTOP™ 5 technology. It features a collector-emitter voltage of 650 V and a continuous collector current of 20 A at 25°C, with a maximum junction temperature of 175°C. The device operates in the PG-TO220-3 package with a saturation voltage of 1.6 V at 25°C. Key electrical parameters include a gate charge of 48 nC, turn-off energy of 0.06 mJ, and turn-on energy of 0.16 mJ under standard test conditions.
Verify the specific ordering suffix against official Infineon documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets all required environmental certifications and lead-free standards before finalizing procurement orders.
Select this component for designs requiring high efficiency in hard-switching or resonant topologies. Ensure the thermal management system supports a maximum junction temperature of 175°C and consider the low gate charge for efficient driver selection.
This part belongs to the High Speed 5 FAST IGBT series within Infineon's TRENCHSTOP™ 5 technology portfolio. It is designed as an industrial power control device offering best-in-class efficiency compared to previous generations.
Consult official Infineon cross-reference documents for verified substitutes. Do not assume functional equivalence with other 650V IGBTs without verifying switching characteristics and thermal ratings.
The maximum operating junction temperature is 175°C.
No, it is qualified for industrial applications. Automotive use requires express written approval from Infineon Technologies.
It utilizes TRENCHSTOP™ 5 technology for high-speed switching.