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The IGP20N65H5 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) utilizing TRENCHSTOPTM 5 technology. It features a collector-emitter voltage of 650 V and a continuous collector current of 20 A at 25°C, with a maximum saturation voltage of 1.65 V at 25°C. The device supports a maximum junction temperature of 175°C and operates within a -40°C to +175°C range. Packaged in PG-TO220-3, it offers low gate charge and optimized switching energy for high-speed applications.
Verify the specific ordering suffix against official Infineon documentation to confirm package type and compliance status. Ensure that the component meets all required environmental certifications for the intended deployment environment before finalizing procurement decisions.
Select this component for designs requiring robust performance in mid-to-high frequency switching environments. Consider the thermal resistance characteristics and the recommended operating conditions below 80% of maximum ratings to ensure optimal lifetime and reliability in industrial power control systems.
This part belongs to the High Speed 5 IGBT series within the TRENCHSTOPTM 5 family. It serves as a plug-and-play replacement for previous generation IGBTs, offering improved switching characteristics while maintaining compatibility with existing system architectures for industrial power control applications.
Official datasheets indicate this device acts as a direct replacement for prior generation IGBTs. Verify pinout compatibility and thermal interface requirements when substituting older models in existing circuit designs.
The maximum operating junction temperature is 175°C.
Yes, the high-speed H5 technology is specifically designed to offer best-in-class efficiency in both hard switching and resonant topologies.
The component is available in the PG-TO220-3 package.