IGP30N60H3XKSA1

Overview

The IGP30N60H3XKSA1 is a high-speed Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies, utilizing Trench and Fieldstop technology. It belongs to the third-generation 600V high-speed switching series. The device features a PG-TO220-3 package with a maximum collector-emitter voltage of 600 V and a continuous DC collector current of 60 A at 25°C case temperature. Key electrical parameters include a typical collector-emitter saturation voltage of 1.95 V at 25°C and a maximum junction temperature rating of 175°C.

Feature Summary

• TRENCHSTOPTM technology providing very low turn-off energy and low EMI
• Maximum junction temperature capability of 175°C for robust operation
• Qualified according to JEDEC standards for target industrial applications
• Pb-free lead plating and halogen-free mould compound

Applications

• Uninterruptible power supplies
• Welding converters
• Converters with high switching frequency

Procurement Notes

Verify the specific ordering suffix XKSA1 against official documentation to confirm exact packaging or marking variations. Confirm availability status as product lifecycles may change. Ensure compliance with RoHS requirements and verify that the component meets the intended environmental operating conditions before procurement.

Selection Notes

Select this component for designs requiring high-speed switching capabilities within a 600V system. Consider the thermal resistance characteristics and the need for adequate heat sinking given the 187 W power dissipation rating at 25°C case temperature. Evaluate gate drive requirements based on the specified gate charge and threshold voltage ranges for optimal switching performance.

Part Context

This part is part of Infineon's third-generation high-speed IGBT lineup designed for industrial power control. It complements other devices in the IGP30N60H3 series, offering a balance of low conduction losses and fast switching speeds suitable for demanding power electronics applications where efficiency and thermal management are critical.

Replacement Considerations

Direct substitutes should be sought from the same IGP30N60H3 series. Verify pinout compatibility and ensure equivalent electrical ratings, particularly VCE and IC, when considering alternative packages or technologies.

FAQ

What is the maximum short-circuit withstand time for this IGBT?

The maximum short-circuit withstand time is 5 µs at a junction temperature of 150°C, with a maximum of 1000 allowed short circuits provided the time between them is at least 1.0 s.

Does the IGP30N60H3 support parallel operation?

Yes, the datasheet indicates a positive temperature coefficient for the collector-emitter saturation voltage, which facilitates stable parallel operation.

What is the typical gate charge value?

The typical total gate charge (QG) is 165 nC under test conditions of VCC=480V, IC=30.0A, and VGE=15V.