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The IGP30N65H5 is a high-speed N-channel IGBT utilizing TRENCHSTOP™ 5 technology. It features a collector-emitter voltage of 650 V and a continuous collector current of 55 A at 25°C case temperature. The device operates with a maximum junction temperature of 175°C and includes Pb-free lead plating compliant with RoHS standards. Packaged in PG-TO220-3, it offers low gate charge and optimized switching energy for industrial power control applications.
Verify the specific ordering suffix against official Infineon documentation to ensure correct package and marking specifications. Confirm that the component meets all environmental requirements such as RoHS compliance before integration into final assemblies. Cross-reference datasheet revision history for any updates to electrical characteristics or thermal resistance values.
Select this component for designs requiring robust performance in mid-to-high frequency switching environments. Ensure the thermal management system can handle the specified power dissipation limits at the intended operating case temperatures. Verify compatibility with standard gate drive voltages and resistors to achieve optimal switching times.
This part belongs to the High Speed Fifth Generation series within Infineon's TRENCHSTOP™ portfolio. It serves as a plug-and-play replacement for previous generation IGBTs in existing designs. The technology focuses on reducing switching losses while maintaining high reliability in industrial power electronics.
Officially documented as a direct replacement for previous generation IGBTs in similar voltage and current ratings. Verify pinout compatibility and thermal resistance parameters when substituting older models to ensure circuit integrity.
The maximum operating junction temperature is 175°C.
No, the datasheet specifies qualification according to JEDEC for industrial applications. Automotive use requires express written approval from Infineon Technologies.
The device is available in the PG-TO220-3 through-hole package.