IGT65R140D2ATMA1

$3.46

Description：IGT65R140D2ATMA1
Series：CoolGaN™ G5
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:69f85ec57630 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IGT65R140D2ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IGT65R140D2ATMA1. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IGT65R140D2ATMA1

Description：IGT65R140D2ATMA1
Series：CoolGaN™ G5
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：1.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：1.8 nC @ 3 V
Vgs (Max)：-10V
Input Capacitance (Ciss) (Max) @ Vds：155 pF @ 400 V
FET Feature：-
Power Dissipation (Max)：47W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-HSOF-8-3
Package / Case：8-PowerSFN

Single FETs, MOSFETs datasheet and documents for IGT65R140D2ATMA1

IGT65R140D2ATMA1

Single FETs, MOSFETs Overview

The IGT65R140D2 is a 650 V CoolGaN™ G5 enhancement mode transistor manufactured by Infineon Technologies. It features a PG-HSOF-8 package and delivers a maximum drain-source on-state resistance of 170 mΩ at 25°C. The device supports a continuous drain current of 13 A and a pulsed current of 23 A. Key electrical parameters include a gate charge of 1.8 nC, an output charge of 14 nC, and zero reverse recovery charge. It operates within a junction temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Enhancement mode normally-off technology for safe operation
Ultra-fast switching with low gate and output charge
No reverse-recovery charge and capability for reverse conduction
Superior commutation ruggedness and 2 kV HBM ESD standards

Single FETs, MOSFETs Applications

Industrial power supplies
Telecom and datacenter SMPS
Totem pole PFC topologies
High frequency LLC converters
Charger and adapter designs

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm exact packaging and reel specifications. Confirm that the component matches the required JEDEC qualification standards for your application environment. Ensure compatibility with the recommended operating conditions, which advise staying below 80% of maximum ratings for optimal lifetime.

Single FETs, MOSFETs Selection Notes

Select this component when high power density and miniaturization are critical requirements. The low gate charge facilitates rapid and precise power delivery control, improving system efficiency. Consider the thermal characteristics and PCB footprint constraints associated with the PG-HSOF-8 package during the design phase.

Single FETs, MOSFETs Part Context

This part belongs to the CoolGaN™ G5 family of gallium nitride transistors designed for 650 V power conversion. Produced using 200 mm wafer technology, it offers narrow production tolerances and high product quality suitable for consumer electronics and industrial applications.

Single FETs, MOSFETs Replacement Considerations

Check for direct substitutes within the IGT65RxxxD2 series or other CoolGaN™ G5 variants with compatible voltage and resistance ratings. Verify pinout and package dimensions before substitution.