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The IGT6D20 is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Harris Corporation. It features a collector-emitter breakdown voltage of 400 V and a continuous collector current rating of 32 A. The device is housed in a TO-3 (TO-204AA) through-hole package, designed for high-power applications. Key electrical characteristics include a maximum collector current of 32 A and a breakdown voltage of 400 V, suitable for motor drive and industrial switching environments.
Verify the manufacturer origin, as Harris Corporation assets were acquired by L3Harris Technologies. Confirm the specific datasheet version and RoHS compliance status, as historical components may vary. Ensure the TO-3 package footprint matches your PCB or chassis mounting requirements before ordering.
Select this component when a 400 V rated IGBT with 32 A capacity is required. The TO-3 package offers superior heat dissipation compared to smaller surface-mount options. Consider gate drive requirements and switching speed limitations typical of older generation IGBTs when designing the control circuitry.
This part belongs to the discrete semiconductor category, specifically insulated gate bipolar transistors. It represents legacy technology from Harris Corporation, now often associated with L3Harris. These devices are foundational in medium-power industrial electronics and legacy motor control systems.
Public confirmed substitute part numbers are not available in the provided source material. Cross-reference with modern equivalents from manufacturers like Infineon or Mitsubishi only if official replacement data is verified.