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Product Detailed Parameters
- Description：IGBT 400V 10A TO-3
- Series：-
- Mfr：Harris Corporation
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：400 V
- Current - Collector (Ic) (Max)：10:00 AM
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：Through Hole
- Package / Case：TO-204AA
- Supplier Device Package：TO-3
- Grade：-
- Qualification：-
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Overview
The IGTM10N40A is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Harris Corporation. Designed for switching applications, this component features a collector-emitter breakdown voltage of 400V and a continuous collector current rating of 10A. It utilizes a TO-3 through-hole package with metal construction, suitable for high-power environments.
Feature Summary
- Single N-channel IGBT configuration optimized for power switching operations
- Robust metal TO-3 flange mount package designed for efficient thermal dissipation
- Capable of handling 400V collector-emitter voltage and 10A continuous current
Applications
- General purpose power switching circuits
- Motor drive systems requiring high voltage isolation
- Industrial inverter topologies
Procurement Notes
Verify the manufacturer origin carefully, as Harris Corporation's semiconductor assets were acquired by Renesas Electronics. Ensure the specific suffix matches the required pinout and thermal characteristics. Confirm RoHS compliance status if environmental regulations apply to your assembly process, as older stock may not meet current standards.
Selection Notes
Select this component when a rugged, high-current switching device is required in a TO-3 package. The 400V rating suits medium-voltage AC/DC conversion tasks. Consider thermal resistance limits during PCB or chassis layout planning to maintain junction temperature within safe operating areas under full load conditions.
Part Context
This part belongs to the single IGBT family from Harris Corporation, historically significant in power electronics before corporate restructuring. It serves as a discrete switching element distinct from integrated modules, offering flexibility for custom power stage designs where individual control of high-power switches is necessary.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Cross-reference with Renesas Electronics product lines for potential modern equivalents.
