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Product Detailed Parameters
- Description：IGBT 500V 10A TO-3
- Series：-
- Mfr：Harris Corporation
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：500 V
- Current - Collector (Ic) (Max)：10:00 AM
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：Through Hole
- Package / Case：TO-204AA, TO-3
- Supplier Device Package：TO-3
- Grade：-
- Qualification：-
Download product information
Overview
The IGTM10N50A is a Power Field-Effect Transistor manufactured by Harris Corporation. It is an N-Channel Silicon Metal-Oxide Semiconductor FET designed for high-voltage switching applications. The device features a TO-204AA flange mount package with the case connected to the drain terminal. Key electrical parameters include a maximum drain-source breakdown voltage of 500V, a continuous drain current of 10A, and a maximum on-resistance of 0.6 ohms. The component operates in enhancement mode with a maximum operating temperature of 150°C.
Feature Summary
- High-voltage capability suitable for power switching environments
- Robust thermal management via metal flange mount construction
- Integrated body diode configuration for inductive load handling
Applications
- Industrial motor control systems
- Power supply output stages
- DC-DC converter topologies
Procurement Notes
Verify manufacturer authenticity as Harris Corporation's semiconductor assets were acquired. Confirm RoHS compliance status due to historical non-compliance data. Validate pinout compatibility with TO-204AA footprints. Check datasheet revisions for parameter updates. Ensure proper insulation during installation given the exposed drain connection.
Selection Notes
Select based on 500V blocking requirement and 10A current capacity. Consider thermal resistance characteristics for heat sink design. Evaluate gate drive requirements against the specified on-resistance. Compare package mounting constraints with existing chassis designs. Assess switching speed limitations relative to application frequency needs.
Part Context
This component belongs to the legacy Harris Power MOSFET lineup, characterized by ruggedized TO-204AA packaging. The series targets industrial and automotive power electronics before corporate restructuring. Similar devices in this family share the 500V rating but vary in current handling and on-resistance specifications.
Replacement Considerations
Cross-reference with STMicroelectronics STH10N50D for equivalent 10A/500V performance. Verify pinout alignment between TO-204AA and alternative packages like TO-218. Confirm thermal interface material compatibility when substituting manufacturers.
