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The IGW100N60H3FKSA1 is a high-speed IGBT in Trench and Fieldstop technology. It features a collector-emitter voltage of 600 V, a DC collector current of 140 A at 25°C, and a saturation voltage of 1.85 V at 25°C. The device supports a maximum junction temperature of 175°C and has a power dissipation of 714 W at 25°C. It utilizes a PG-TO247 package with Pin 1 as gate, Pins 2 and backside as collector, and Pin 3 as emitter.
Verify the specific ordering suffix FKSA1 against official Infineon documentation to confirm lead-free plating and halogen-free mold compound compliance. Ensure the component matches the PG-TO247 pinout definition provided in the datasheet before integration into circuit designs.
Select this component for applications requiring high-speed switching and robust short-circuit protection. Consider the thermal resistance characteristics and the need for adequate heat sinking to maintain junction temperatures within the specified operating range during continuous operation.
This part belongs to the High-speed switching series third generation from Infineon Technologies. It is designed for industrial power control applications where efficiency and switching speed are critical performance factors.
Consult official Infineon substitution guides for verified alternatives. Do not assume cross-compatibility with other manufacturers' TO-247 packages without verifying electrical parameters and pin configurations.
The maximum short-circuit withstand time is 5 µs when VGE is 15.0V and VCC is less than or equal to 400V.
Pin 1 is the gate, Pins 2 and the backside are the collector, and Pin 3 is the emitter.
The typical turn-off energy (Eoff) is 1.90 mJ under standard test conditions at 25°C.