IGW25N120H3FKSA1

Overview

The IGW25N120H3FKSA1 is a high-speed silicon IGBT utilizing Trench and Fieldstop technology. It features a collector-emitter voltage of 1200 V, a continuous collector current of 50 A at 25°C, and a maximum junction temperature of 175°C. The device achieves low saturation voltage (2.05 V typ) and total switching energy of 2.65 mJ at 25°C with an IKW25N120H3 diode. Packaged in PG-TO247-3, it supports short-circuit withstand times up to 10 µs.

Feature Summary

• TRENCHSTOP™ technology delivering best-in-class switching performance with less than 500 µJ total switching losses.
• Very low collector-emitter saturation voltage for efficient power handling.
• Low electromagnetic interference (EMI) characteristics suitable for sensitive environments.
• Qualified according to JEDEC standards for target industrial applications.

Applications

• Solar inverters
• Uninterruptible power supplies (UPS)
• Welding converters
• Converters with high switching frequency

Procurement Notes

Verify the specific ordering suffix FKSA1 against official Infineon documentation to confirm package type and reel specifications. Ensure compatibility with recommended SiC diodes like IDH15S120 for optimal switching performance. Confirm RoHS compliance and Pb-free lead plating status via the manufacturer's certificate of conformity before finalizing procurement orders.

Selection Notes

Select this component for designs requiring high-speed switching capabilities within a 1200 V rating. Consider the thermal resistance values and derating curves when determining heatsink requirements for case temperatures above 25°C. Evaluate gate resistor values to balance switching speed against EMI constraints, noting that switching times vary significantly with junction temperature and load current.

Part Context

This part belongs to the HighSpeed 3 series of IGBTs from Infineon Technologies. It represents an evolution in Trench and Fieldstop technology designed to minimize switching losses while maintaining robust short-circuit capability. The device is distinct from standard field-stop IGBTs by its optimized carrier lifetime management for higher frequency operation.

Replacement Considerations

IGW25N120H3XK is a verified substitute offering identical electrical characteristics and pinout configuration. Both variants utilize the same PG-TO247-3 package and share the same technical datasheet specifications. Verify marking codes G25H1203 on both devices to ensure correct identification during replacement procedures.

FAQ

What is the maximum short-circuit withstand time?

The device can withstand a short circuit for up to 10 µs under conditions where VCC ≤ 600 V, VGE = 15 V, and Tvj = 175°C.

Is this component qualified for automotive use?

No, this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council.

How does junction temperature affect switching energy?

Total switching energy increases with junction temperature; it rises from 2.65 mJ at 25°C to 4.3 mJ at 175°C under standard test conditions.