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Product Detailed Parameters
- Description：IGBT NPT FS 1200V 50A TO247-3
- Series：TrenchStop®
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：NPT, Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：50 A
- Current - Collector Pulsed (Icm)：75 A
- Vce(on) (Max) @ Vge, Ic：2.2V @ 15V, 25A
- Power - Max：190 W
- Switching Energy：4.2mJ
- Input Type：Standard
- Gate Charge：155 nC
- Td (on/off) @ 25°C：50ns/560ns
- Test Condition：600V, 25A, 22Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：PG-TO247-3-1
- Grade：-
- Qualification：-
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Overview
The IGW25T120FKSA1 is a single NPT IGBT from the TrenchStop® Series, rated at 1200V collector-emitter voltage and 50A DC collector current. It features an integrated gate resistor of 8 Ω and operates within a junction temperature range of -40°C to +150°C. The device provides a short circuit withstand time of 10 µs and exhibits low switching energy losses.
Feature Summary
- Utilizes TrenchStop® and Fieldstop technology for high ruggedness and tight parameter distribution.
- NPT technology ensures positive temperature coefficient in VCE(sat) for easy parallel switching capability.
- Features low EMI generation and low gate charge characteristics.
Applications
- Frequency Converters
- Uninterrupted Power Supply
Procurement Notes
Verify the specific ordering suffix FKSA1 against official Infineon documentation to confirm package type and tape-and-reel specifications. Ensure the component meets JEDEC qualification standards required for your target application environment before finalizing procurement.
Selection Notes
Select this component for applications requiring robust short-circuit withstand capability and stable thermal behavior. The NPT structure supports parallel operation effectively. Consider the 8 Ω internal gate resistor when designing drive circuits to optimize switching speed and minimize EMI without external components.
Part Context
This part belongs to the TrenchStop® Series of power semiconductors by Infineon Technologies. It is designed specifically for 1200V applications, combining trench gate and field-stop technologies to deliver low conduction and switching losses while maintaining high reliability under demanding electrical conditions.
Replacement Considerations
Consult official Infineon cross-reference documents for verified substitutes. Generic equivalents may not match the specific NPT technology or short-circuit ratings required for frequency converters and UPS systems.
FAQ
What is the maximum short circuit withstand time?
The maximum short circuit withstand time is 10 µs at VGE = 15V, VCC ≤ 1200V, and Tj ≤ 150°C.
Does the device support parallel switching?
Yes, the NPT technology offers a positive temperature coefficient in VCE(sat), which facilitates easy parallel switching capability.
What is the value of the integrated gate resistor?
The integrated gate resistor (RGint) has a typical value of 8 Ω.
