IGW30N65L5XKSA1

$4.02

Description：IGBT 650V 85A TO247-3
Series：TrenchStop™ 5

SKU:849d1252cde2 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT 650V 85A TO247-3
Series：TrenchStop™ 5
Mfr：Infineon Technologies
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：85 A
Current - Collector Pulsed (Icm)：120 A
Vce(on) (Max) @ Vge, Ic：1.35V @ 15V, 30A
Power - Max：227 W
Switching Energy：470µJ (on), 1.35mJ (off)
Input Type：Standard
Gate Charge：168 nC
Td (on/off) @ 25°C：33ns/308ns
Test Condition：400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：PG-TO247-3
Grade：-
Qualification：-

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IGW30N65L5XKSA1

Overview

The IGW30N65L5XKSA1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) utilizing TRENCHSTOP™ 5 technology. It features a collector-emitter voltage of 650 V and a continuous collector current of 85 A at 25°C case temperature. The device exhibits a low collector-emitter saturation voltage of 1.05 V at 30 A and 25°C. Maximum junction temperature reaches 175°C, with power dissipation rated at 227 W at 25°C case temperature. It is housed in a PG-TO247-3 through-hole package.

Feature Summary

Low VCE(sat) L5 technology providing very low collector-emitter saturation voltage
Optimized tradeoff between conduction and switching losses for industrial applications
Qualified according to JEDEC standards for target industrial environments
Lead-free plating compliant with RoHS directives

Applications

Uninterruptible power supplies
Solar photovoltaic inverters
Welding machines

Procurement Notes

Verify the specific ordering suffix XKSA1 against official Infineon documentation to confirm package type and compliance status. Confirm that the component meets the required industrial qualification standards defined by JEDEC tests. Ensure the procurement channel provides valid datasheets matching revision V2.2 or later. Validate that the delivered units match the PG-TO247-3 physical dimensions specified in the package drawing.

Selection Notes

Select this component for high-efficiency industrial power control where low conduction losses are critical. The 175°C maximum junction temperature allows for robust operation in demanding thermal environments. Consider the 85 A continuous current rating when designing heat sinks for case temperatures up to 25°C. Verify gate drive requirements align with the typical gate charge of 168 nC for optimal switching performance.

Part Context

This IGBT belongs to the TRENCHSTOP™ 5 Low VCE(sat) series, representing the fifth generation of Infineon's trench gate technology. It is designed specifically for industrial power control applications requiring high reliability. The product spectrum includes PSpice models for simulation purposes. It is distinct from automotive-qualified variants as it does not hold AEC-Q101 certification.