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The IGW40N60TPXKSA1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from Infineon Technologies, utilizing TRENCHSTOP technology. It features a collector-emitter voltage of 600V and a continuous collector current of 48A at 25°C. The device operates within a temperature range of -40°C to +175°C and has a power dissipation rating of 123W. Packaged in a TO-247-3 through-hole case, it is scheduled for obsolescence.
This component is officially designated as Not Recommended for New Designs (NRND). Manufacturers have scheduled the part for discontinuation. Engineers must verify end-of-life status before finalizing designs. Availability is limited to existing stock or remaining production runs. Sourcing should prioritize alternative replacement parts to ensure long-term supply chain stability and avoid future manufacturing constraints.
Select this IGBT only for maintenance or legacy system repairs where specific form-factor compatibility is required. The 600V rating and 48A current capacity suit moderate-power industrial loads. Due to the NRND status, new product development should utilize current-generation equivalents. Verify thermal management requirements against the 123W dissipation limit and ensure gate drive specifications align with standard TRENCHSTOP interface characteristics.
The IGW40N60TPXKSA1 belongs to Infineon's TRENCHSTOP family, known for balanced switching and conduction losses. This specific model represents an older generation discrete IGBT solution. It serves as a foundational component in medium-power electronics, preceding newer iterations like the IGBT7 series which offer enhanced efficiency and integration capabilities for modern high-density power conversion systems.
Public confirmed substitute part numbers are not explicitly listed in the provided documentation. Users should consult official Infineon cross-reference guides for direct replacements.