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The IGW50N60H3FKSA1 is a high-speed IGBT in Trench and Fieldstop technology. It features a collector-emitter voltage of 600 V, a continuous collector current of 100 A at 25°C case temperature, and a saturation voltage of 1.85 V at 25°C. The device supports a maximum junction temperature of 175°C and has a power dissipation of 333 W at 25°C. It includes an anti-parallel diode with a forward voltage of 1.65 V. The switching frequency range is 20 kHz to 100 kHz.
Verify the specific ordering suffix FKSA1 against official Infineon documentation to confirm package type and reel specifications. Ensure the component meets RoHS compliance requirements and Pb-free lead plating standards as stated in the datasheet. Cross-reference the manufacturer part number with authorized distributors to validate authenticity and traceability before procurement.
Select this component for applications requiring high switching speeds within the 20 kHz to 100 kHz range. Consider the 1.85 V saturation voltage for conduction loss calculations at 25°C. Evaluate thermal management needs based on the 333 W power dissipation rating at 25°C case temperature. Ensure gate drive voltages remain within the specified ±20 V limit.
This device belongs to the third-generation High-speed switching series from Infineon Technologies. It utilizes Trench and Fieldstop technology to optimize performance between switching speed and conduction losses. The PG-TO247-3 package provides a robust mechanical solution for through-hole mounting in industrial power control applications.
Consult official Infineon substitution guides for verified alternatives. Generic replacements may not match the specific TRENCHSTOP™ characteristics or switching energy values.
The short circuit withstand time is 5 µs when VGE=15.0V, VCC≤400V, and Tvj=150°C.
Yes, it features a very soft, fast recovery anti-parallel diode.
The maximum operating junction temperature is 175°C.