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The IGW50N65H5AXKSA1 is a single N-channel IGBT from Infineon's TRENCHSTOP™ 5 series, designed for high-speed switching applications. It features a 650V collector-emitter voltage rating and supports continuous collector currents of up to 80A at 25°C case temperature. The device utilizes H5 technology to achieve low gate charge and optimized switching energy losses in hard-switching and resonant topologies. It operates within a junction temperature range of -40°C to +175°C and is housed in a PG-TO247-3 package.
Verify the specific ordering suffix against official documentation to confirm exact marking codes and packaging configurations. Confirm that the component meets all required environmental compliance standards for the intended deployment environment before finalizing procurement orders.
Select this component for designs requiring robust performance in high-frequency switching environments. Ensure thermal management solutions accommodate the specified power dissipation limits at varying case temperatures. Verify compatibility with standard gate drive voltages and resistances to optimize switching times.
This part belongs to the TRENCHSTOP™ 5 family, representing the fifth generation of Infineon's IGBT technology. It serves as a plug-and-play replacement for previous generations while offering improved efficiency metrics. The product spectrum includes various current ratings within the same package footprint.
IGW50N65H5FKSA1
The maximum collector-emitter saturation voltage is 2.10 V when measured at a junction temperature of 175°C.
No, the datasheet explicitly states that the package is not recommended for surface mount applications.
The typical turn-off delay time is 173 ns under standard test conditions at a junction temperature of 25°C.