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Product Detailed Parameters
- Description：IGBT TRENCH 600V 80A TO247-3
- Series：TrenchStop™
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：Trench
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：80 A
- Current - Collector Pulsed (Icm)：180 A
- Vce(on) (Max) @ Vge, Ic：2.3V @ 15V, 60A
- Power - Max：416 W
- Switching Energy：2.1mJ (on), 1.13mJ (off)
- Input Type：Standard
- Gate Charge：375 nC
- Td (on/off) @ 25°C：27ns/252ns
- Test Condition：400V, 60A, 6Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：PG-TO247-3
- Grade：-
- Qualification：-
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Overview
The IGW60N60H3FKSA1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from Infineon Technologies, utilizing TrenchStop HighSpeed 3 technology. It features a TO-247-3 through-hole package with a maximum collector-emitter voltage of 600 V and a continuous collector current of 80 A at 25°C. The device exhibits a low collector-emitter saturation voltage of 1.85 V and supports a power dissipation of 416 W. Operating within a temperature range of -40°C to +175°C, it includes an integrated anti-parallel diode for efficient switching applications.
Feature Summary
- Integrates TrenchStop HighSpeed 3 technology for optimized switching performance and reduced losses.
- Features a robust TO-247-3 through-hole package designed for high thermal stability and mechanical reliability.
- Includes an integrated fast recovery anti-parallel diode to facilitate efficient commutation in bridge configurations.
Applications
- High-frequency motor drives and servo amplifiers
- Switched-mode power supplies (SMPS)
- Industrial inverters and UPS systems
Procurement Notes
Verify the complete part number including suffixes such as FKSA1 against official datasheets to ensure correct packaging and specific variant attributes. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer, as supply chain conditions fluctuate. Ensure ordering quantities align with standard tube packaging requirements specified in the procurement documentation.
Selection Notes
Select this component for designs requiring high current handling combined with fast switching speeds in a standard through-hole form factor. The 600V rating suits medium-voltage industrial applications. Evaluate thermal management requirements based on the 416W dissipation capability and ensure gate drive circuits accommodate the specific charge requirements typical of HighSpeed 3 devices.
Part Context
This IGBT belongs to Infineon's TrenchStop HighSpeed 3 family, which combines trench gate technology with field-stop structures. This architecture aims to minimize switching losses while maintaining low conduction voltage drops. The series is engineered for applications demanding high efficiency and compact design in power conversion systems.
Replacement Considerations
Cross-reference with other HighSpeed 3 variants like IKW50N60H3 or IKW60N60H3 for pin-compatible alternatives with adjusted current ratings. Verify that any substitute maintains compatible saturation voltage and switching characteristics to preserve original circuit performance without redesigning gate drive components.
