IGW75N65H5XKSA1

Overview

The IGW75N65H5 is a high-speed fifth-generation IGBT in TRENCHSTOP technology. It features a collector-emitter voltage of 650 V and a continuous collector current of 75 A at 100°C, with a maximum rating of 120 A at 25°C. The saturation voltage is 1.65 V at 25°C. Power dissipation reaches 395 W at 25°C case temperature. Operating junction temperature spans -40°C to +175°C. The device utilizes PG-TO247-3 packaging.

Feature Summary

• High-speed H5 technology optimized for efficiency in hard switching and resonant topologies
• Designed as a plug-and-play replacement for previous generation IGBTs
• Qualified according to JEDEC standards for target applications

Applications

• Uninterruptible power supplies
• Solar converters
• Welding converters
• Mid to high range switching frequency converters

Procurement Notes

Verify the specific datasheet revision (V2.2) matches your design requirements. Confirm that the application does not exceed 80% of maximum ratings for optimal lifetime. Ensure thermal management aligns with the specified Rth(j-C) values. Check for RoHS compliance and lead-free plating status during final acceptance testing.

Selection Notes

Select this component for designs requiring high-speed switching capabilities within the TRENCHSTOP 5 family. Consider the 175°C maximum junction temperature for high-temperature environments. Evaluate gate resistance requirements against the provided switching energy loss curves to optimize performance for specific load conditions.

Part Context

This part belongs to Infineon's High Speed Series Fifth Generation lineup. It represents an evolution in silicon IGBT technology focused on reducing switching losses while maintaining robustness. The product is distinct from CoolSiC hybrid variants and standard low-loss series.

Replacement Considerations

Officially documented as a plug-and-play replacement for previous generation IGBTs. Verify pinout compatibility with legacy TO-247 packages before substitution.