IGZ100N65H5XKSA1

$3.42

Description：IGBT TRENCH 650V 161A TO247-4
Series：TrenchStop™ 5

SKU:25b58972b0d6 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH 650V 161A TO247-4
Series：TrenchStop™ 5
Mfr：Infineon Technologies
Package：Bulk,Tube
IGBT Type：Trench
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：161 A
Current - Collector Pulsed (Icm)：400 A
Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 100A
Power - Max：536 W
Switching Energy：850µJ (on), 770µJ (off)
Input Type：Standard
Gate Charge：210 nC
Td (on/off) @ 25°C：30ns/421ns
Test Condition：400V, 50A, 8Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-4
Supplier Device Package：PG-TO247-4
Grade：-
Qualification：-

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IGZ100N65H5XKSA1

Overview

The IGZ100N65H5 is a high-speed fifth-generation IGBT in TRENCHSTOP™ 5 technology. It features a 650V breakdown voltage and a maximum junction temperature of 175°C. The device operates with a collector-emitter saturation voltage of 1.65V at 25°C and 100A. It utilizes a Kelvin emitter pin to achieve ultra-low switching losses. The component is housed in a PG-TO247-4 package.

Feature Summary

Ultra-low switching loss achieved through the integration of a Kelvin emitter pin combined with TRENCHSTOP™ 5 technology.
Provides best-in-class efficiency for hard switching and resonant topologies.
Designed as a plug-and-play replacement for previous generation IGBTs.

Applications

Uninterruptible power supplies
Welding converters
Mid to high range switching frequency converters
Solar string inverters

Procurement Notes

Verify the specific datasheet revision (Rev. 2.1) when sourcing components. Confirm that the Kelvin emitter pin is correctly identified during assembly, as it is not exchangeable with the standard emitter pin. Ensure gate drive circuits are designed to accommodate the ±20V continuous rating to prevent malfunction.

Selection Notes

Select this component for applications requiring high efficiency in mid-to-high frequency switching environments. The 175°C maximum junction temperature allows for robust thermal operation. Verify that the system design can support the required gate resistance values to optimize the trade-off between switching speed and electromagnetic interference.

Part Context

This part belongs to the High Speed Series Fifth Generation within Infineon's TRENCHSTOP™ portfolio. It represents an evolution in silicon IGBT technology aimed at reducing energy consumption in industrial power control systems while maintaining compatibility with existing mounting standards.

Replacement Considerations

Officially documented as a plug-and-play replacement for previous generation IGBTs. Specific substitute part numbers are not listed in the provided documentation.