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The IHP10T120 is a 1200V, 10A N-channel IGBT in PG-TO-220-3-1 packaging. It features TrenchStop and Fieldstop technology with an integrated EmCon HE diode. Key electrical parameters include VCE(sat) of 1.7V at 25°C, short circuit withstand time of 10µs, and RthJC of 0.9 K/W for the IGBT. The device operates within a junction temperature range of -40°C to +150°C.
Verify component authenticity by checking the marking code H10T120 against the datasheet specifications. Confirm package type is PG-TO-220-3-1. Ensure the supplier provides traceability documentation consistent with JEDEC qualification standards for target applications.
Select this component for designs requiring high voltage isolation and robust thermal performance. The positive temperature coefficient aids in current sharing when paralleling devices. Verify gate drive requirements align with the specified VGE limits and threshold voltages for optimal switching efficiency.
Part of Infineon's Soft Switching Series utilizing TrenchStop and Fieldstop technologies. Designed specifically for applications demanding low switching losses and high reliability under hard or soft switching conditions. Qualified according to JEDEC standards for industrial and automotive target environments.
No public confirmed substitute part numbers are available in the provided documentation.