IHW15N120R2

$1.79

Description：IGBT TRENCH FS 1200V 30A TO247-3
Series：-

SKU:d13d71071277 Category: Single IGBTs Brand: Infineon Technologies

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 1200V 30A TO247-3
Series：-
Mfr：Infineon Technologies
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：30 A
Current - Collector Pulsed (Icm)：45 A
Vce(on) (Max) @ Vge, Ic：1.75V @ 15V, 15A
Power - Max：357 W
Switching Energy：900µJ (off)
Input Type：Standard
Gate Charge：133 nC
Td (on/off) @ 25°C：-/282ns
Test Condition：600V, 15A, 14.8Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：PG-TO247-3-1
Grade：-
Qualification：-

Download product information

IHW15N120R2

Overview

The IHW15N120R2 is a Reverse Conducting IGBT with a monolithic body diode, utilizing Trench and Fieldstop technology for 1200 V applications. It features a PG-TO-247-3 package and operates within a junction temperature range of -40°C to +175°C. Key electrical parameters include a collector-emitter voltage (VCE) of 1200 V, a DC collector current (IC) of 15 A at 100°C case temperature, and a collector-emitter saturation voltage (VCE(sat)) of 1.5 V at 25°C. The device supports a maximum power dissipation of 357 W at 25°C case temperature.

Feature Summary

Integrates a powerful monolithic body diode characterized by very low forward voltage to clamp negative voltages.
Employs Trench and Fieldstop technology to ensure tight parameter distribution and high ruggedness with temperature-stable behavior.
Designed for low electromagnetic interference (EMI) performance.
Qualified according to JEDEC standards for target applications.

Applications

Inductive Cooking
Soft Switching Applications

Procurement Notes

Verify the specific revision level against the latest Infineon documentation before implementation. Confirm that the PG-TO-247-3 mounting torque requirements are met during assembly. Ensure thermal management designs account for the specified junction-to-case thermal resistance values under actual operating conditions.

Selection Notes

Select this component for circuits requiring integrated reverse conduction capabilities without external freewheeling diodes. Consider the 1200 V blocking capability and 15 A continuous current rating for medium-power switching loads. Evaluate the soft-switching characteristics against system frequency requirements to optimize efficiency.

Part Context

This device belongs to Infineon's Soft Switching Series of power semiconductors. It combines an IGBT switch with a body diode in a single monolithic structure. The technology targets applications demanding high reliability and stable performance across varying thermal conditions.