IHW15N120R3FKSA1

$3.66

Description：IGBT TRENCH 1200V 30A TO247-3
Series：TrenchStop®

SKU:e783eb3c51bc Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH 1200V 30A TO247-3
Series：TrenchStop®
Mfr：Infineon Technologies
Package：Tube
IGBT Type：Trench
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：30 A
Current - Collector Pulsed (Icm)：45 A
Vce(on) (Max) @ Vge, Ic：1.7V @ 15V, 15A
Power - Max：254 W
Switching Energy：700µJ (off)
Input Type：Standard
Gate Charge：165 nC
Td (on/off) @ 25°C：-/300ns
Test Condition：600V, 15A, 14.6Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：PG-TO247-3-1
Grade：-
Qualification：-

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IHW15N120R3FKSA1

Overview

The IHW15N120R3FKSA1 is a Resonant Switching Series reverse-conducting IGBT with a monolithic body diode, manufactured by Infineon Technologies. It utilizes TRENCHSTOP technology and is housed in a PG-TO247-3 package. Key electrical parameters include a collector-emitter voltage (VCE) of 1200 V, a DC collector current (IC) of 15 A at 100°C case temperature, and a collector-emitter saturation voltage (VCEsat) of 1.48 V at 25°C. The device supports a maximum operating junction temperature of 175°C.

Feature Summary

Features a powerful monolithic body diode designed for soft commutation only.
TRENCHSTOP technology provides tight parameter distribution and high ruggedness.
Positive temperature coefficient in VCEsat enables easy parallel switching capability.
Low EMI characteristics suitable for sensitive electronic environments.

Applications

Inductive cooking
Inverterized microwave ovens
Resonant converters

Procurement Notes

Verify the specific ordering suffix FKSA1 against official documentation to confirm packaging details and compliance status. Confirm that the component meets target application requirements, as it is not qualified according to AEC-Q100 or AEC-Q101 automotive standards. Ensure sourcing channels provide valid traceability for this specific part number.

Selection Notes

Select this component for resonant and soft-switching applications requiring low forward voltage in the integrated diode. Consider the positive temperature coefficient of VCEsat when designing circuits that require parallel operation. Verify thermal management capabilities against the specified power dissipation limits at the intended case temperatures.

Part Context

This device belongs to the Resonant Switching Series within Infineon's portfolio of reverse-conducting IGBTs. It integrates an IGBT chip with a fast recovery diode on a single silicon substrate. The monolithic construction reduces parasitic inductance compared to discrete anti-parallel diode configurations, optimizing performance in high-frequency resonant topologies.