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The IHW20N120R2 is a Reverse Conducting IGBT from Infineon's Soft Switching Series, featuring a monolithic body diode. It utilizes TrenchStop and Fieldstop technology for 1200 V applications. Key electrical parameters include a collector-emitter voltage (VCE) of 1200 V, a DC collector current (IC) of 40 A at 25°C, and a saturation voltage (VCE(sat)) of 1.55 V at 25°C. The device operates within a junction temperature range of -40°C to +175°C and offers a power dissipation rating of 330 W.
Verify the specific revision status and lead times directly with authorized distributors or Infineon sales offices, as component availability may fluctuate. Confirm that the PG-TO-247-3 package matches your PCB footprint requirements. Ensure compliance with RoHS standards and Pb-free lead plating specifications required by your manufacturing process before finalizing procurement orders.
Select this component for designs requiring integrated reverse conduction to simplify circuit topology. The positive temperature coefficient of the saturation voltage facilitates safe paralleling of multiple units for higher current handling. Consider the thermal resistance characteristics when designing heatsinking solutions to maintain junction temperatures within the specified operational limits during continuous operation.
This device belongs to Infineon's Soft Switching Series of power semiconductors. It combines an IGBT switch with a freewheeling diode in a single monolithic body. This integration reduces component count and parasitic inductances compared to discrete combinations, making it suitable for resonant converter topologies where soft switching techniques are employed to minimize switching losses.
IHW20N120R5