IHW20N120R5XKSA1

$3.62

Description：IGBT 1200V 40A TO247-3
Series：TrenchStop®

SKU:1d62cc0718b9 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT 1200V 40A TO247-3
Series：TrenchStop®
Mfr：Infineon Technologies
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：40 A
Current - Collector Pulsed (Icm)：60 A
Vce(on) (Max) @ Vge, Ic：1.75V @ 15V, 20A
Power - Max：288 W
Switching Energy：750µJ (off)
Input Type：Standard
Gate Charge：170 nC
Td (on/off) @ 25°C：-/260ns
Test Condition：600V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：PG-TO247-3
Grade：-
Qualification：-

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IHW20N120R5XKSA1

Overview

The IHW20N120R5 is a single Reverse Conducting IGBT with a monolithic body diode, utilizing TRENCHSTOP technology. It features a collector-emitter voltage of 1200 V and a continuous collector current of 40 A at 25°C. The saturation voltage is 1.55 V at 25°C. Operating within a junction temperature range of -40°C to +175°C, it offers low switching energy and EMI. The device is housed in a PG-TO247-3 package.

Feature Summary

TRENCHSTOP technology providing tight parameter distribution and high ruggedness
Positive temperature coefficient in VCEsat for easy parallel switching capability
Powerful monolithic body diode designed for soft commutation
Low electromagnetic interference (EMI) characteristics

Applications

Inductive cooking
Inverterized microwave ovens
Resonant converters
Soft switching applications

Procurement Notes

Verify the specific ordering suffix XKSA1 against official Infineon documentation to confirm compliance details such as RoHS status and halogen-free classification. Ensure that the component matches the exact datasheet revision required for your design specifications before finalizing procurement orders.

Selection Notes

Select this component for resonant switching series applications requiring soft commutation. Consider the thermal resistance values and power dissipation limits when designing heat sinks. Verify gate drive requirements against the specified threshold voltage and gate charge parameters for optimal performance.

Part Context

This part belongs to the Resonant Switching Series of Reverse Conducting IGBTs from Infineon Technologies. It integrates an IGBT switch and a freewheeling diode in a single package, simplifying circuit design for high-frequency resonant topologies commonly used in consumer electronics and industrial power control.