IHW25N120R2FKSA1

Description：IGBT NPT 1200V 50A TO247-3
Series：-

SKU:e3479ac84f55 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT NPT 1200V 50A TO247-3
Series：-
Mfr：Infineon Technologies
Package：Tube
IGBT Type：NPT
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：50 A
Current - Collector Pulsed (Icm)：75 A
Vce(on) (Max) @ Vge, Ic：1.8V @ 15V, 25A
Power - Max：365 W
Switching Energy：1.59mJ
Input Type：Standard
Gate Charge：60.7 nC
Td (on/off) @ 25°C：-/324ns
Test Condition：600V, 25A, 10Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：PG-TO247-3-1
Grade：-
Qualification：-

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IHW25N120R2FKSA1

Overview

The IHW25N120R2FKSA1 is a Reverse Conducting IGBT from Infineon's Soft Switching Series, featuring a monolithic body diode. It utilizes Trench and Fieldstop technology for 1200V applications, offering tight parameter distribution and high ruggedness. The device operates with a DC collector current of 25A at 100°C case temperature and supports a maximum junction temperature of 175°C. Key electrical parameters include a VCE(sat) of 1.6V at 25°C and a diode forward voltage of 1.5V at 25°C. It is housed in a PG-TO-247-3 package.

Feature Summary

Monolithic integration of a powerful reverse diode with low forward voltage to clamp negative voltages.
Trench and Fieldstop technology ensures temperature-stable behavior and high ruggedness.
Positive temperature coefficient in VCE(sat) facilitates easy parallel switching capability.

Applications

Inductive Cooking
Soft Switching Applications

Procurement Notes

Verify the specific ordering suffix FKSA1 against official Infineon documentation to confirm packaging details and compliance status. Ensure the component meets JEDEC qualification requirements for the intended target application before finalizing procurement decisions.

Selection Notes

Select this component for designs requiring integrated reverse conduction to simplify circuit topology. The positive temperature coefficient of the saturation voltage makes it suitable for parallel operation. Verify thermal management capabilities align with the specified junction temperature limits.

Part Context

This part belongs to Infineon's Soft Switching Series of power semiconductors. It combines an NPT IGBT with a monolithic body diode, distinguishing it from standard IGBTs that require external freewheeling diodes. The series is engineered for efficiency in resonant and soft-switching topologies.

Replacement Considerations

Direct substitutes are not explicitly listed in the provided datasheet. Evaluate other Reverse Conducting IGBTs from the same manufacturer or industry equivalents based on matching voltage ratings, current capacity, and package dimensions.