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Product Detailed Parameters
- Description：IGBT TRENCH FS 1000V 60A TO247-3
- Series：TrenchStop®
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：1000 V
- Current - Collector (Ic) (Max)：60 A
- Current - Collector Pulsed (Icm)：90 A
- Vce(on) (Max) @ Vge, Ic：1.7V @ 15V, 30A
- Power - Max：412 W
- Switching Energy：1.6mJ (off)
- Input Type：Standard
- Gate Charge：217 nC
- Td (on/off) @ 25°C：35ns/546ns
- Test Condition：600V, 30A, 15Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：PG-TO247-3-1
- Grade：-
- Qualification：-
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Overview
The IHW30N100TFKSA1 is a discrete Insulated Gate Bipolar Transistor (IGBT) with an integrated anti-parallel diode, manufactured by Infineon Technologies. It utilizes TrenchStop and Fieldstop technology for 1000 V applications. The device features a collector-emitter voltage of 1000 V and a continuous DC collector current of 60 A at 25°C case temperature. It operates within a junction temperature range of -40°C to +175°C and is housed in a PG-TO-247-3 package.
Feature Summary
- TrenchStop and Fieldstop technology providing high ruggedness and temperature-stable behavior
- Positive temperature coefficient in saturation voltage enabling easy parallel switching capability
- Application-specific optimization of the inverse diode for low loss performance
Applications
- Microwave ovens
- Soft switching applications
Procurement Notes
Verify the specific ordering suffix against official Infineon documentation to confirm exact packaging and tape-and-reel specifications. Confirm RoHS compliance status and JEDEC qualification requirements prior to procurement. Ensure the component meets target application standards as defined in the manufacturer's datasheet.
Selection Notes
Select this component for designs requiring 1000 V blocking capability and soft switching operation. Evaluate thermal resistance parameters and power dissipation limits relative to the intended case temperature. Consider the positive temperature coefficient for potential parallel configurations to manage load sharing effectively.
Part Context
This part belongs to Infineon's Soft Switching Series, designed for low-loss power semiconductor applications. It integrates an IGBT and an anti-parallel rectifier diode in a single TO-247 package. The technology targets high-efficiency conversion systems where controlled switching transitions are critical.
Replacement Considerations
IHW30N100T
FAQ
What technology does the IHW30N100TFKSA1 utilize?
It utilizes TrenchStop and Fieldstop technology optimized for 1000 V applications.
Is the device suitable for parallel switching?
Yes, it offers easy parallel switching capability due to the positive temperature coefficient in its saturation voltage.
What is the maximum operating junction temperature?
The specified maximum operating junction temperature is 175°C.
