IHW30N110R5XKSA1

$3.88

Description：IGBT TRENCH 60A TO247-3
Series：-

SKU:b303df2b3fda Category: Single IGBTs Brand: Infineon Technologies

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：IGBT TRENCH 60A TO247-3
Series：-
Mfr：Infineon Technologies
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：-
Current - Collector (Ic) (Max)：60 A
Current - Collector Pulsed (Icm)：90 A
Vce(on) (Max) @ Vge, Ic：1.85V @ 15V, 30A
Power - Max：330 W
Switching Energy：-
Input Type：Standard
Gate Charge：240 nC
Td (on/off) @ 25°C：-/350ns
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：PG-TO247-3
Grade：-
Qualification：-

Download product information

IHW30N110R5XKSA1

Overview

The IHW30N110R5XKSA1 is a reverse-conducting IGBT with a monolithic body diode, rated at 1100 V collector-emitter voltage and 60 A DC collector current at 25°C case temperature. It features a PG-TO247-3 package with an internal emitter inductance of 13 nH. The device exhibits a typical collector-emitter saturation voltage of 1.55 V at 30 A and 25°C junction temperature. Gate charge is typically 240 nC at 880 V. The integrated diode has a forward voltage of 1.8 V at 30 A and 25°C. Operating junction temperature ranges from -40°C to 175°C.

Feature Summary

Reverse-conducting configuration integrating an IGBT and a powerful monolithic body diode designed for soft commutation.
Positive temperature coefficient in VCEsat facilitates easy parallel switching capability.
High ruggedness with temperature-stable behavior and very tight parameter distribution.
Low EMI generation and Pb-free lead plating compliant with RoHS standards.

Applications

Induction cookers
Microwave ovens
Rice cookers

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm exact packaging and tape-and-reel specifications. Confirm that the component meets industrial application validation requirements per JEDEC standards. Ensure thermal management designs account for the specified junction-to-case thermal resistance values under maximum operating conditions.

Selection Notes

Select this component for high-voltage household appliance applications requiring integrated reverse conduction. Evaluate gate resistor values to manage switching energy losses and ensure operation within the turn-off safe operating area limits. Consider the positive temperature coefficient for potential parallel configurations to increase current handling capacity.

Part Context

This part belongs to Infineon's reverse-conducting IGBT portfolio, specifically designed for resonant and hard-switched applications in domestic appliances. It replaces older discrete diode solutions by integrating the freewheeling path directly into the IGBT chip, reducing circuit complexity and parasitic inductance.

Replacement Considerations

Direct replacements include the IHW30N110R5 without the XKSA1 suffix for identical electrical characteristics but potentially different packaging. Verify pinout compatibility and thermal interface dimensions when substituting with other 1100V RC-IGBTs from different manufacturers.

FAQ

Is the IHW30N110R5 qualified for automotive applications?

No, the datasheet explicitly states that the product is not qualified according to AEC Q100 or AEC Q101 documents and is intended for industrial applications.

What is the maximum non-repetitive peak collector current?

The maximum non-repetitive peak collector current (ICSM) is 200 A, limited by a maximum junction temperature of 175°C and a pulse width less than 3 µs.