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The IHW30N120R3FKSA1 is a single reverse conducting IGBT from Infineon's TRENCHSTOP RC series, designed for soft switching applications. It features a monolithic body diode integrated with the IGBT chip in a TO-247-3 package. Key electrical parameters include a collector-emitter voltage (VCEO) of 1.2 kV and a continuous collector current (Ic) of 60 A at 25°C. The device exhibits a typical collector-emitter saturation voltage (VCE(sat)) of 1.48 V and a power dissipation (Pd) of 310 W. It operates within a temperature range of -40°C to +175°C.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and specific datasheet revision prior to integration. Ensure thermal management solutions align with the specified 310 W power dissipation rating and junction temperature limits. Cross-reference ordering suffixes to guarantee exact package and electrical parameter matching.
Select this component for designs requiring high voltage blocking capability combined with integrated freewheeling diode functionality. The TO-247-3 package facilitates efficient heat dissipation for medium-power industrial applications. Evaluate gate drive requirements against the specified ±20 V maximum gate-emitter voltage. Consider the soft switching nature of the RC topology when designing snubber circuits and layout parasitics.
This part belongs to Infineon's TRENCHSTOP family, which employs trench gate technology to reduce switching losses and improve efficiency. The RC (Reverse Conducting) variant integrates the anti-parallel diode on the same silicon die, reducing component count and parasitic inductance compared to discrete diode configurations. This architecture is standard in modern induction heating and resonant power conversion systems.
Public confirmed substitute part numbers: IHW30N120R5XKSA1, IHW30N120R3.