IHW30N160R2FKSA1

IHW30N160R2FKSA1

  • Description:IGBT NPT FS 1600V 60A TO247-3
  • Series:TrenchStop®

SKU:ddd1231e90d4 Category: Brand:

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Product Detailed Parameters

  • Description:IGBT NPT FS 1600V 60A TO247-3
  • Series:TrenchStop®
  • Mfr:Infineon Technologies
  • Package:Tube
  • IGBT Type:NPT, Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max):1600 V
  • Current - Collector (Ic) (Max):60 A
  • Current - Collector Pulsed (Icm):90 A
  • Vce(on) (Max) @ Vge, Ic:2.1V @ 15V, 30A
  • Power - Max:312 W
  • Switching Energy:4.37mJ
  • Input Type:Standard
  • Gate Charge:94 nC
  • Td (on/off) @ 25°C:-/525ns
  • Test Condition:600V, 30A, 10Ohm, 15V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:PG-TO247-3-1
  • Grade:-
  • Qualification:-

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IHW30N160R2FKSA1

Overview

The IHW30N160R2 is a TrenchStop Reverse Conducting (RC-)IGBT with a monolithic body diode, designed for 1600 V applications. It features NPT technology offering easy parallel switching capability due to a positive temperature coefficient in VCE(sat). The device operates at a maximum junction temperature of 175°C and is housed in a PG-TO-247-3 package. Key electrical parameters include a collector-emitter voltage of 1600 V, a DC collector current of 30 A at TC=100°C, and a saturation voltage of 1.8 V at 25°C.

Feature Summary

  • Trench and Fieldstop technology provides tight parameter distribution and high ruggedness.
  • Powerful monolithic body diode with very low forward voltage clamps negative voltages.
  • NPT technology enables safe paralleling of multiple devices through positive temperature coefficient behavior.

Applications

  • Inductive Cooking
  • Soft Switching Applications

Procurement Notes

Verify the component against official Infineon datasheets to confirm authenticity. Ensure the marking on the package matches the specified identifier. Check for RoHS compliance and Pb-free lead plating as stated in the documentation. Confirm that the ordering suffix corresponds to the specific packaging requirements for your assembly process.

Selection Notes

Select this component for high-voltage applications requiring soft switching capabilities. The integrated body diode simplifies circuit design by eliminating external components. Consider the thermal resistance values when designing heat sinks to maintain the junction temperature within the specified operating range under varying load conditions.

Part Context

This part belongs to Infineon's Soft Switching Series of power semiconductors. It utilizes TrenchStop technology optimized for robust performance in demanding environments. The RC-IGBT configuration integrates both switching and rectification functions into a single package, enhancing system efficiency and reducing footprint compared to discrete solutions.

Replacement Considerations

Consult official Infineon resources for verified substitute part numbers. Ensure any replacement maintains compatibility with the 1600 V rating and PG-TO-247-3 package dimensions. Verify that alternative devices meet the same thermal and electrical specifications for safe operation.

FAQ

What technology does the IHW30N160R2 utilize?

It uses Trench and Fieldstop technology combined with NPT technology for improved ruggedness and parallel switching capability.

Is the device suitable for paralleling?

Yes, the NPT technology provides a positive temperature coefficient in VCE(sat), which facilitates easy parallel switching.

What is the maximum junction temperature?

The maximum operating junction temperature is 175°C.

IHW30N160R2FKSA1IHW30N160R2FKSA1

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