IHW30N160R5XKSA1

Overview

The IHW30N160R5XKSA1 is a Reverse-Conducting IGBT with a monolithic body diode, manufactured by Infineon Technologies. It features a collector-emitter voltage (VCE) of 1600 V and a DC collector current (IC) of 30 A at Tc = 25 °C. The device utilizes PG-TO247-3 packaging for through-hole mounting. Key electrical parameters include a maximum gate-emitter voltage of ±20 V, a typical collector-emitter saturation voltage (VCEsat) of 2.15 V at 25 °C, and a total switching energy (Ets) of 1.27 mJ at 175 °C. The integrated diode supports a forward current (IF) of 55 A at Tc = 25 °C.

Feature Summary

• Reverse-conducting architecture integrating an IGBT and a powerful monolithic body diode with low forward voltage.
• Positive temperature coefficient in VCEsat enabling easy parallel switching capability.
• High ruggedness with temperature-stable behavior and very tight parameter distribution.
• Low electromagnetic interference (EMI) generation during operation.

Applications

• Induction cooking systems
• Microwave ovens

Procurement Notes

Verify the component authenticity against the official Infineon datasheet IFX-AAL233-003. Confirm that the ordering suffix XKSA1 corresponds to the specific tube packaging configuration. Ensure the received part matches the marking H30SR5 on the PG-TO247-3 package. Validate RoHS compliance and halogen-free status according to IEC 61249-2-21 standards prior to integration.

Selection Notes

Select this component for high-voltage applications requiring integrated reverse conduction without external diodes. The 1600 V rating suits industrial and home appliance inverters. Consider the thermal resistance Rth(j-a) of 40 K/W for heatsink design. Verify that the operating junction temperature range of -40 °C to 175 °C meets the environmental requirements of the target system.

Part Context

This device belongs to the IHW series of Reverse-Conducting IGBTs from Infineon Technologies. It is designed as a discrete solution for power conversion stages where space efficiency and reduced component count are critical. The PG-TO247-3 package provides robust mechanical stability and thermal performance for through-hole PCB assembly.

Replacement Considerations

Direct substitutes must match the 1600 V rating, 30 A continuous current, and TO-247-3 package. Verify compatibility of internal emitter inductance (LE = 13 nH) and gate charge characteristics to ensure circuit stability.

FAQ

Is the IHW30N160R5 qualified for automotive applications?

No, the product is not qualified according to AEC-Q100 or AEC-Q101 documents of the Automotive Electronics Council.

What is the maximum non-repetitive peak collector current?

The non-repetitive peak collector current (ICSM) is 200 A, limited by the maximum junction temperature of 175 °C and pulse width less than 3 µs.

How does the device handle parallel operation?

It offers easy parallel switching capability due to the positive temperature coefficient in its collector-emitter saturation voltage (VCEsat).