IHW30N65R6XKSA1

$3.11

Description：IGBT 650V 65A TO247-3
Series：-

SKU:50179a512663 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT 650V 65A TO247-3
Series：-
Mfr：Infineon Technologies
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：65 A
Current - Collector Pulsed (Icm)：90 A
Vce(on) (Max) @ Vge, Ic：1.6V @ 15V, 30A
Power - Max：163 W
Switching Energy：730µJ (on), 260µJ (off)
Input Type：Standard
Gate Charge：120 nC
Td (on/off) @ 25°C：13ns/161ns
Test Condition：400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr)：90 ns
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：PG-TO247-3
Grade：-
Qualification：-

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IHW30N65R6XKSA1

Overview

The IHW30N65R6 is a Reverse-Conducting IGBT with a monolithic body diode, manufactured by Infineon Technologies. It features a PG-TO247-3 package and operates within a junction temperature range of -40°C to +175°C. The device supports a collector-emitter voltage (VCE) of 650 V and a DC collector current (IC) of 65 A at 25°C case temperature. Key electrical parameters include a maximum VCEsat of 1.60 V at 25°C and a gate-emitter threshold voltage (VGEth) ranging from 3.20 V to 4.80 V. Switching characteristics at 25°C include an Eoff of 0.26 mJ and an Eon of 0.73 mJ. The integrated diode provides a forward current (IF) of 25 A at 25°C with a forward voltage (VF) max of 1.90 V.

Feature Summary

Positive temperature coefficient in VCEsat enables easy parallel switching capability.
Monolithic reverse-conducting diode offers low forward voltage and high ruggedness.
Optimized for soft turn-off behavior to ensure stable temperature operation and low EMI.
Qualified for industrial applications according to JEDEC47/20/22 standards.

Applications

Induction Cooking
Microwave Ovens

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and compliance status. Confirm that the component meets the required industrial qualification standards. Ensure thermal management designs account for the specified junction-to-case thermal resistance values provided in the datasheet tables.

Selection Notes

Select this component for applications requiring integrated reverse conduction without external freewheeling diodes. Evaluate the 650 V rating against peak circuit voltages. Consider the 65 A continuous current limit at 25°C case temperature when designing heat sinks. Verify compatibility with standard gate drive voltages given the 15 V typical operating level.

Part Context

This part belongs to Infineon's Reverse-Conducting IGBT portfolio, designed specifically for resonant and soft-switching topologies. It integrates the IGBT and diode on a single silicon chip to reduce parasitic inductance and system complexity. The PG-TO247-3 package provides robust mechanical mounting and efficient thermal dissipation for high-power consumer electronics.

Replacement Considerations

Direct replacements must match the 650 V rating, TO-247-3 package, and reverse-conducting functionality. Verify that substitute devices offer comparable VCEsat and switching energy losses to maintain system efficiency. Check if alternative parts require different gate drive resistances or have different thermal resistance specifications.