IHW30N90R

$2.58

Description：IGBT TRENCH FS 900V 60A TO247-3
Series：-

SKU:c8c007b02a2c Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 900V 60A TO247-3
Series：-
Mfr：Infineon Technologies
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：900 V
Current - Collector (Ic) (Max)：60 A
Current - Collector Pulsed (Icm)：90 A
Vce(on) (Max) @ Vge, Ic：1.7V @ 15V, 30A
Power - Max：454 W
Switching Energy：1.46mJ
Input Type：Standard
Gate Charge：200 nC
Td (on/off) @ 25°C：-/511ns
Test Condition：600V, 30A, 15Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：PG-TO247-3-1
Grade：-
Qualification：-

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IHW30N90R

Overview

The IHW30N90R is a reverse conducting IGBT with a monolithic body diode, utilizing Trench and Fieldstop technology for 900 V applications. It features a typical saturation voltage of 1.5 V at 25 °C and operates within a junction temperature range of -40 to +175 °C. The device supports a DC collector current of 60 A at 25 °C case temperature and 30 A at 100 °C. Power dissipation reaches 454 W at 25 °C. It is housed in a PG-TO-247-3 package.

Feature Summary

Trench and Fieldstop technology ensures tight parameter distribution and high ruggedness.
Positive temperature coefficient in VCE(sat) facilitates easy parallel switching capability.
Application-specific optimization of the inverse diode enhances performance.
Low electromagnetic interference (EMI) characteristics.

Applications

Microwave ovens
Zero Current Switching (ZCS) soft switching applications

Procurement Notes

Verify component authenticity by checking the marking code H30R90 on the package surface. Confirm compliance with RoHS standards and Pb-free lead plating requirements. Ensure the ordering suffix matches the specific revision indicated in official Infineon documentation. Cross-reference datasheet revisions to validate electrical parameters against your design specifications.

Selection Notes

Select this component for designs requiring integrated reverse conduction without external diodes. Evaluate thermal resistance values to ensure adequate heat sinking for the intended power dissipation levels. Consider the positive temperature coefficient for potential parallel operation scenarios. Verify gate-emitter voltage limits during transient conditions to prevent device damage.

Part Context

This device belongs to the Soft Switching Series from Infineon Technologies. It integrates an IGBT and a diode into a single semiconductor structure. The technology combines trench gate architecture with field-stop layers to optimize switching behavior and reduce losses in high-frequency power conversion circuits.