IHW40N120R3FKSA1

Overview

The IHW40N120R3FKSA1 is a single silicon Insulated Gate Bipolar Transistor (IGBT) from the TrenchStop RC series, manufactured by Infineon Technologies. It utilizes Trench and Fieldstop technology to achieve low conduction losses. The device is housed in a TO-247-3 package designed for through-hole mounting. Key electrical parameters include a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 80 A at 25°C. The saturation voltage is specified at 1.55 V, with a power dissipation capacity of 429 W. It operates within a temperature range of -40°C to +175°C.

Feature Summary

• Integrates Trench and Fieldstop technology for optimized switching performance and reduced conduction losses.
• Features an integrated anti-parallel fast recovery diode for use in half-bridge configurations.
• Designed with soft-switching characteristics to minimize electromagnetic interference and switching stress.

Applications

• Induction heating systems
• Uninterruptible Power Supply (UPS) units
• High-frequency welding inverters

Procurement Notes

Verify component authenticity against official Infineon documentation due to potential counterfeit risks. Confirm that the specific suffix FKSA1 matches the required tape-and-reel or tube packaging configuration for your assembly line. Check for end-of-life status or obsolescence notices, as availability may be restricted. Ensure thermal interface materials are compatible with the TO-247-3 package specifications.

Selection Notes

Select this component when high voltage blocking capability and robust short-circuit withstand time are required. The 1.2 kV rating suits medium-voltage industrial applications. Compare the 1.55 V saturation voltage against alternative devices to ensure efficiency targets are met. Consider the 80 A current rating relative to the expected load profile and thermal management capabilities of the final system design.

Part Context

This part belongs to Infineon's TrenchStop family, which combines trench gate technology with field-stop structures. This architecture is engineered to balance low on-state voltage drop with fast reverse recovery characteristics of the integrated diode. The RC variant specifically emphasizes soft recovery behavior to reduce voltage spikes during commutation.

Replacement Considerations

IHW40N120R5XKSA1

FAQ

What is the maximum short-circuit withstand time for this IGBT?

The datasheet specifies a short-circuit withstand time, but exact values depend on gate drive conditions and junction temperature limits defined in the official technical documentation.

Does the IHW40N120R3FKSA1 include an integrated diode?

Yes, it features an integrated anti-parallel fast recovery diode suitable for hard-switching applications.

What is the recommended operating junction temperature range?

The device is rated for operation between -40°C and +175°C.