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The IHW40N135R3FKSA1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from Infineon's TRENCHSTOP™ 5 series, housed in a TO-247-3 package. It features a collector-emitter breakdown voltage of 1350 V and a continuous collector current rating of 40 A at 25°C. The device exhibits a typical saturation voltage of 1.65 V and a maximum power dissipation of 394 W. Designed for robust performance, it supports an operating junction temperature range from -40°C to +175°C.
Verify the complete ordering code includes the 'KSA1' suffix to ensure compliance with RoHS standards and specific manufacturing traceability requirements. Confirm that the procurement channel sources directly from authorized distributors or Infineon to guarantee component authenticity and prevent counterfeits. Check for any specific handling instructions regarding electrostatic discharge during storage and installation.
Select this component when designing circuits requiring high voltage blocking capability combined with moderate current handling in a standard through-hole form factor. Ensure the gate drive circuitry accommodates the specified threshold voltage and charge requirements. Evaluate thermal management solutions to maintain junction temperatures within the specified limits under peak load conditions.
This part belongs to Infineon's TRENCHSTOP™ 5 family, which represents an evolution in silicon IGBT technology. The series focuses on improving the trade-off between conduction and switching losses compared to previous generations. The TO-247-3 package is widely used in industrial power electronics due to its proven reliability and ease of mounting on heatsinks.
Direct replacements must match the 1350 V rating, 40 A current capacity, and TO-247-3 footprint. Verify that alternative devices offer comparable saturation voltage and switching energy values to maintain system efficiency. Cross-reference datasheets for pinout compatibility and thermal resistance specifications before substitution.