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Product Detailed Parameters
- Description：IGBT TRENCH 600V 80A TO247-3
- Series：TrenchStop®
- Mfr：Infineon Technologies
- Package：Tube,Tube
- IGBT Type：Trench
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：80 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：2.05V @ 15V, 40A
- Power - Max：305 W
- Switching Energy：750µJ (off)
- Input Type：Standard
- Gate Charge：223 nC
- Td (on/off) @ 25°C：-/193ns
- Test Condition：400V, 40A, 5.6Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：PG-TO247-3-1
- Grade：-
- Qualification：-
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Overview
The IHW40N60RFKSA1 is a reverse-conducting IGBT from the Resonant Switching Series, utilizing TRENCHSTOP technology. It features an integrated monolithic body diode designed for soft commutation. The device operates with a collector-emitter voltage of 600 V and a continuous collector current of 80 A at 25°C case temperature. Key electrical parameters include a saturation voltage of 1.65 V at 25°C and a maximum junction temperature of 175°C. It is housed in a PG-TO247-3 package.
Feature Summary
- Monolithic body diode with low forward voltage optimized for soft commutation
- TRENCHSTOP technology providing tight parameter distribution and high ruggedness
- Positive temperature coefficient in VCEsat enabling easy parallel switching capability
- Low electromagnetic interference (EMI) performance
Applications
- Inductive cooking systems
- Inverterized microwave ovens
- Resonant converters
- Soft switching applications
Procurement Notes
Verify component authenticity through official Infineon channels or authorized distributors. Confirm RoHS compliance and Pb-free lead plating status prior to integration. Ensure design margins do not exceed 80% of maximum ratings for optimal lifetime. Check datasheet revision history for any updates to storage temperature or leakage limits before finalizing procurement specifications.
Selection Notes
Select this component for resonant and soft-switching topologies requiring integrated freewheeling functionality. The positive temperature coefficient facilitates parallel operation without active current balancing. Evaluate thermal resistance values against system cooling capabilities to maintain junction temperatures within the specified -40°C to +175°C range during continuous operation.
Part Context
This part belongs to the IHW40N60R Resonant Switching Series manufactured by Infineon Technologies. It is a silicon-based single IGBT with an integrated anti-parallel diode. The product utilizes TRENCHSTOP technology to enhance switching performance and ruggedness compared to standard IGBTs, targeting high-efficiency power control applications.
Replacement Considerations
Direct substitutes are not explicitly listed in the provided documentation. When replacing, ensure the new component matches the 600V rating, TO-247-3 package, and reverse-conducting configuration. Verify that the replacement supports soft commutation requirements and has compatible thermal and electrical characteristics.
FAQ
Is the integrated diode suitable for hard switching?
No, the powerful monolithic body diode is designed specifically for soft commutation only.
What technology does the IHW40N60RFKSA1 utilize?
It utilizes TRENCHSTOP technology, which offers tight parameter distribution, high ruggedness, and low VCEsat.
Can multiple units be connected in parallel?
Yes, the device features a positive temperature coefficient in VCEsat, which enables easy parallel switching capability.
