IHW50N65R6XKSA1

Overview

The IHW50N65R6XKSA1 is a Reverse-Conducting IGBT from Infineon Technologies, integrating an N-channel IGBT with a monolithic body diode in a PG-TO247-3 package. It features a collector-emitter voltage (VCEO) of 650 V and a DC collector current (IC) of 100 A at 25°C case temperature. The device exhibits a typical collector-emitter saturation voltage (VCEsat) of 1.30 V at 25°C and 1.55 V at 175°C junction temperature. Total switching energy (Ets) is typically 2.16 mJ at 25°C and 2.44 mJ at 175°C. The integrated diode supports a repetitive peak reverse voltage of 650 V and a forward current of 39 A at 25°C.

Feature Summary

• Positive temperature coefficient in VCEsat enables easy parallel switching capability.
• Monolithic integration of a powerful reverse-conducting diode with low forward voltage.
• Optimized for soft switching behavior to ensure excellent EMI characteristics.
• High ruggedness and stable temperature behavior under varying thermal conditions.

Applications

• Induction Cooking
• Microwave Ovens

Procurement Notes

Verify the specific ordering suffix XKSA1 against official documentation to confirm compliance with RoHS standards and Pb-free lead plating requirements. Ensure that procurement channels provide valid traceability for industrial applications qualified according to JEDEC47/20/22 standards. Confirm that the component is suitable for through-hole mounting processes within specified torque limits.

Selection Notes

Select this component for resonant switching applications requiring high reliability and low power dissipation. Consider the positive temperature coefficient for designs involving parallel configurations. Evaluate thermal resistance values against system cooling capabilities to maintain junction temperatures within the -40°C to 175°C operating range. Verify gate drive compatibility with the specified threshold voltages and charge requirements.

Part Context

This part belongs to Infineon's Reverse-Conducting IGBT portfolio, designed specifically for induction heating applications. It combines the switching capabilities of an IGBT with the rectification function of a diode in a single TO-247 package. This integration reduces component count and simplifies circuit layout compared to discrete solutions.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult official Infineon resources for potential alternatives or updated product line replacements.

FAQ

Is the IHW50N65R6XKSA1 qualified for automotive applications?

No, the product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council.

What is the internal emitter inductance value?

The internal emitter inductance (LE) measured 5mm from the case is 13.0 nH.

How does the device handle soft switching turn-off energy?

The device offers very low soft turn-off energy (Eoff), which is typically 0.15 mJ at 25°C and 0.30 mJ at 175°C, contributing to reduced power dissipation.