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The IHY15N120R3XKSA1 is a single silicon Insulated Gate Bipolar Transistor (IGBT) from Infineon Technologies, belonging to the Trench series. It features a TO-247HC-3 package designed for through-hole mounting. The device supports a maximum collector-emitter voltage of 1200 V and a continuous collector current of 30 A at 25°C. Key electrical parameters include a saturation voltage of 2.6 V, power dissipation of 254 W, and an operating temperature range from -40°C to +175°C.
This component is officially listed as obsolete by the manufacturer. Procurement must rely on secondary market distributors or remaining stock. Verify authenticity carefully due to end-of-life status. Confirm RoHS compliance details with the specific supplier. Ensure the TO-247HC-3 package variant matches design requirements before ordering.
Select this IGBT for applications requiring 1200V blocking capability and moderate current handling. The TO-247HC-3 package offers thermal efficiency suitable for discrete mounting. Consider the 2.6V saturation voltage for conduction loss calculations. Evaluate availability constraints given its obsolete status when designing new systems.
Part of Infineon's Trench IGBT family, the IHY15N120R3XKSA1 provides a balance of voltage rating and current capacity. It serves as a discrete switching solution for power electronics. The component is distinct from higher-current modules or lower-voltage variants within the broader product portfolio.
As an obsolete part, direct substitutes are not guaranteed. Review datasheets for equivalent 1200V, 30A TO-247-3 IGBTs from other manufacturers. Verify pinout compatibility and thermal characteristics before substitution.