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The IHY20N120R3XKSA1 is a silicon Insulated Gate Bipolar Transistor (IGBT) from Infineon Technologies, belonging to the TRENCHSTOP IHY series. It features a monolithic body design with soft-switching characteristics and an integrated anti-parallel diode. The component is housed in a TO-247HC-3 package for through-hole mounting. Key electrical parameters include a collector-emitter voltage of 1200 V, a continuous collector current of 40 A at 25°C, and a power dissipation rating of 310 W. The saturation voltage is 1.48 V, with a maximum operating temperature of +175°C.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status as historical data may vary. Check for obsolescence notices, as this part number may be discontinued or superseded by newer generations within the TRENCHSTOP family. Ensure thermal management solutions match the TO-247HC-3 package requirements.
Select this component for applications requiring high voltage blocking capability and efficient soft-switching performance. The 1200 V rating suits medium-voltage industrial applications. Consider the 40 A current rating against thermal constraints in the TO-247HC-3 package. Compare with standard hard-switching IGBTs if switching speed is not critical.
This device is part of Infineon's TRENCHSTOP IHY series, designed for high-efficiency power conversion. It represents a specific variant within the broader IGBT portfolio, distinguished by its monolithic diode integration and optimized switching behavior for resonant converter topologies.
Public confirmed substitute part numbers are not available in the provided documentation. Consult official Infineon replacement guides for legacy component transitions.