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Product Detailed Parameters
- Description：JFET PWR FIELD EFFECT
- Series：CoolSiC™
- Mfr：Infineon Technologies
- Package：Bulk
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：1200 V
- Drain to Source Voltage (Vdss)：1200 V
- Current - Drain (Idss) @ Vds (Vgs=0)：3.3 µA @ 1200 V
- Current Drain (Id) - Max：35 A
- Voltage - Cutoff (VGS off) @ Id：-
- Input Capacitance (Ciss) (Max) @ Vds：2000pF @ 19.5V (VGS)
- Resistance - RDS(On)：70 mOhms
- Power - Max：238 W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：PG-TO247-3
- Grade：-
- Qualification：-
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Overview
The IJW120R070T1FKSA1 is a silicon carbide (SiC) MOSFET manufactured by Infineon Technologies, belonging to the OptiMOS™ Power-8 family. It features a 1200 V drain-source voltage rating and a typical on-resistance of 70 mΩ at 25°C. The device utilizes a TrenchG4 technology with a TO-247-4 package for through-hole mounting. Key electrical characteristics include a maximum continuous drain current of 136 A at 25°C and a total power dissipation of 455 W. The component supports an operating junction temperature range from -55°C to +175°C.
Feature Summary
- Utilizes TrenchG4 technology for optimized switching performance and low conduction losses.
- Features a TO-247-4 package design that facilitates top-side cooling for enhanced thermal management.
- Includes an integrated body diode with fast recovery characteristics suitable for hard-switching applications.
Applications
- Motor drives and traction inverters
- On-board chargers for electric vehicles
- DC-DC converters in automotive systems
Procurement Notes
Verify the specific ordering suffix against official Infineon documentation to confirm exact packaging and reel specifications. Ensure compatibility with RoHS directives and check for any recent lifecycle status updates or obsolescence notices directly from the manufacturer before finalizing procurement plans.
Selection Notes
Select this component based on its 1200 V rating and 70 mΩ on-resistance balance for high-efficiency power conversion. Consider the TO-247-4 package requirements for PCB layout and heatsinking capabilities. Evaluate thermal resistance parameters relative to the expected ambient operating conditions and duty cycles.
Part Context
This part belongs to Infineon's OptiMOS Power-8 series, which integrates advanced trench gate technologies. The OptiMOS line targets high-power density applications requiring robust reliability and efficient thermal handling within the automotive and industrial sectors.
Replacement Considerations
Consult official Infineon cross-reference tools for verified replacements. When evaluating alternatives, match the voltage class, on-resistance, and package dimensions to ensure mechanical and electrical compatibility without assuming direct interchangeability.
