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The IKA08N65H5XKSA1 is a high-speed fifth-generation IGBT in TRENCHSTOP™ 5 technology, copacked with a RAPID 1 fast and soft antiparallel diode. It features a collector-emitter voltage of 650 V, a continuous collector current of 10.8 A at 25°C, and a saturation voltage of 1.65 V. The device operates up to a maximum junction temperature of 175°C and dissipates 31.2 W. It utilizes a PG-TO220-3 FP package.
Verify the specific ordering suffix against official Infineon documentation to confirm exact packaging and marking configurations. Ensure that the component meets all relevant environmental compliance requirements for your manufacturing process. Cross-reference the datasheet revision history to confirm the document version matches your design specifications.
Select this component for designs requiring robust performance in mid-range switching frequencies. The integrated diode simplifies circuit topology by eliminating external freewheeling components. Evaluate thermal management strategies based on the specified junction-to-case resistance values to ensure reliable operation within the recommended operating limits.
This part belongs to the High Speed 5 series utilizing TRENCHSTOP™ 5 technology. It represents an evolution in discrete IGBT modules designed for industrial power control applications. The product spectrum includes various current ratings within the same voltage class, offering designers flexibility for different power levels.
Official documentation identifies this device as a plug-and-play replacement for previous generation IGBTs. Verify pinout compatibility and thermal characteristics when substituting older models in existing designs.