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The IKA10N60TXKSA1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from Infineon Technologies, belonging to the Trenchstop IGBT3 series. It utilizes silicon technology and is housed in a TO-220-3 FP package designed for through-hole mounting. The device features a maximum collector-emitter voltage of 600 V and a continuous collector current of 11.7 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.5 V and a power dissipation rating of 30 W. It operates within a temperature range of -40°C to +175°C.
Verify the complete part number including the suffix XKSA1 to ensure correct packaging and compliance specifications. Confirm that the TO-220-3 FP footprint matches the target PCB design. Check for RoHS compliance status as indicated in official documentation before finalizing procurement orders.
Select this component for circuits requiring 600V blocking capability with moderate current handling around 10A. The TO-220-3 FP package offers a balance between thermal performance and mounting simplicity. Ensure gate drive voltages remain within the specified ±20 V limits to prevent device damage during operation.
This IGBT is part of Infineon's Trenchstop family, which integrates advanced trench gate technology to reduce switching energy losses. The specific model targets general-purpose power switching applications where efficiency and reliability are critical. It serves as a discrete solution for medium-power conversion systems.
The part number alias IKA10N60T represents the same functional device without the specific ordering suffix. Verify pinout compatibility and thermal resistance characteristics when substituting with other 600V 10A IGBTs in the TO-220-3 FP package.