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The IKA10N65ET6 is a TRENCHSTOP™ IGBT6 with an integrated antiparallel Rapid diode, rated at 650 V and 10 A. It features a typical collector-emitter saturation voltage of 1.5 V and supports a maximum junction temperature of 175°C. The device offers a short-circuit withstand time of 3 µs and low gate charge of 27 nC. Packaged in PG-TO220-3 FP, it provides high ruggedness and tight parameter distribution for industrial applications.
Verify the specific ordering suffix XKSA2 against official Infineon documentation to confirm package marking and compliance details. Ensure the component meets JEDEC47/20/22 standards for industrial qualification. Confirm that the application does not require automotive certification, as this product is not qualified according to AEC-Q100 or AEC-Q101 documents.
Select this component for general-purpose drive and appliance applications requiring robust performance at moderate currents. The 650 V rating and 10 A continuous current are suitable for standard industrial loads. Consider the 175°C max junction temperature for thermal management design. Verify compatibility with existing gate drive circuits due to the 27 nC gate charge requirement.
This part belongs to the TRENCHSTOP™ IGBT6 family, designed for improved efficiency and ruggedness compared to previous generations. It integrates a high-performance antiparallel diode, reducing the need for external components. The PG-TO220-3 FP package facilitates through-hole mounting and heat dissipation for discrete power solutions in consumer and industrial electronics.
Public confirmed substitute part numbers: None identified in verified source material.