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The IKA15N65H5XKSA1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from Infineon's TRENCHSTOP™ 5 H5 series. It utilizes silicon technology and is housed in a TO-220FP-3 through-hole package. The device supports a maximum collector-emitter voltage of 650 V and a continuous collector current of 14 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.65 V, a gate-emitter voltage range of -20 V to +20 V, and a power dissipation rating of 33.3 W. It operates within a temperature range of -40°C to +175°C junction temperature.
Verify the specific ordering suffix XKSA1 against the manufacturer's latest datasheet to confirm pinout compatibility and RoHS compliance status. Ensure the procurement channel provides original Infineon packaging to prevent counterfeit components. Cross-reference the part number with official distributor catalogs to validate authenticity before finalizing orders.
Select this component for applications requiring a balance of moderate current handling and high-speed switching in a standard through-hole form factor. Compare the 1.65 V saturation voltage and 14 A current rating against system thermal constraints. Consider the TO-220FP-3 package dimensions for PCB layout and heatsinking requirements relative to the 33.3 W power dissipation limit.
This IGBT belongs to the TRENCHSTOP™ 5 family, representing Infineon's fifth-generation trench gate technology. The H5 variant specifically denotes optimized hard-switching characteristics. It serves as a discrete power switch solution, distinct from integrated modules, targeting cost-sensitive designs where individual component placement allows for flexible circuit topology.
Direct substitutes within the same series include IKA15N65F5XKSA1, which offers similar voltage and current ratings but may differ in switching speed characteristics due to the F5 variant designation. Verify pin compatibility and thermal resistance values when cross-referencing with other manufacturers' TO-220FP-3 IGBTs rated at 650V/15A.