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The IKB15N60TATMA1 is a single Insulated Gate Bipolar Transistor (IGBT) from Infineon's TRENCHSTOP™ series, housed in a PG-TO263-3 (D2PAK-3) surface-mount package. It features a collector-emitter voltage of 600 V and a continuous collector current of 26 A at 25°C case temperature. The device incorporates an integrated gate resistor of 0 Ω and utilizes Fieldstop technology with a soft recovery anti-parallel diode. Key electrical parameters include a typical saturation voltage of 1.5 V at 25°C, a maximum junction temperature of 175°C, and a short-circuit withstand time of 5 µs.
Verify the specific ordering suffix ATMA1 against official documentation to confirm packaging details such as reel or cut tape specifications. Ensure that the component meets RoHS compliance requirements and lead-free plating standards mandated by the target application environment. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability before finalizing procurement orders.
Select this component for applications requiring low conduction losses and robust short-circuit capability within a compact surface-mount form factor. Consider the thermal resistance characteristics and the need for adequate heatsinking when operating near the maximum junction temperature limit. Evaluate the switching frequency requirements against the device's energy loss curves to ensure efficient performance in inverter topologies.
This device belongs to the TRENCHSTOP™ Series, which employs Fieldstop technology designed for 600V applications. The series is characterized by high ruggedness, temperature-stable behavior, and very high switching speeds. The IKB15N60T variant specifically targets low-loss power switching solutions in consumer and industrial motor drive markets.
Official substitute part numbers include IKB15N6TXT and IKB15N60TATMA1. Verify pinout compatibility and thermal resistance values when substituting with other packages in the same family.
The device supports a short-circuit withstand time of 5 µs under conditions where VGE = 15V, VCC ≤ 400V, and Tj ≤ 150°C.
Yes, the datasheet specifies an integrated gate resistor value of 0 Ω.
It features a soft, fast recovery anti-parallel Emitter Controlled HE diode.