IKB30N65EH5ATMA1

$3.89

Description：IGBT TRENCH FS 650V 55A TO263-3
Series：TrenchStop™ 5

SKU:3bc9e8997e4a Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 650V 55A TO263-3
Series：TrenchStop™ 5
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：55 A
Current - Collector Pulsed (Icm)：90 A
Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 30A
Power - Max：188 W
Switching Energy：870µJ (on), 300µJ (off)
Input Type：Standard
Gate Charge：70 nC
Td (on/off) @ 25°C：24ns/159ns
Test Condition：400V, 30A, 22Ohm, 15V
Reverse Recovery Time (trr)：75 ns
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package：PG-TO263-3
Grade：-
Qualification：-

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IKB30N65EH5ATMA1

Overview

The IKB30N65EH5ATMA1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from Infineon's TRENCHSTOP™ 5 series, housed in a surface-mount PG-TO263-3 package. It features a maximum collector-emitter voltage of 650 V and a continuous collector current of 55 A at 25°C. The device has a maximum power dissipation of 188 W and operates within a junction temperature range of -40°C to +175°C. Key electrical parameters include a saturation voltage of 2.1 V at 30 A and switching energies of 870 µJ (turn-on) and 300 µJ (turn-off).

Feature Summary

Incorporates Trenchstop technology for optimized switching performance and reduced gate charge.
Features an integrated anti-parallel fast recovery diode for efficient commutation.
Designed for high thermal stability with a maximum operating junction temperature of 175°C.

Applications

Industrial motor drives and inverters
Switched-mode power supplies (SMPS)
High-frequency welding equipment

Procurement Notes

Verify the specific suffix ATMA1 against official datasheets to confirm packaging type and tape-and-reel specifications. Ensure compatibility with PG-TO263-3 footprint requirements during PCB layout. Confirm RoHS compliance status through manufacturer documentation prior to integration into regulated assemblies.

Selection Notes

Select this component for applications requiring robust 650 V blocking capability with moderate current handling up to 55 A. Consider the 188 W power dissipation limit and thermal resistance characteristics for heatsinking design. Evaluate switching energy values against system efficiency targets compared to alternative TRENCHSTOP generations.

Part Context

This part belongs to the Infineon TRENCHSTOP™ 5 family, representing a fifth-generation silicon IGBT technology. It is designed to replace earlier discrete switch solutions by offering improved switching losses and ruggedness. The TO-263 form factor allows for direct surface mounting, simplifying assembly processes in industrial power electronics modules.