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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 62A TO263-3
- Series：TrenchStop™ 5
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：62 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：1.7V @ 15V, 30A
- Power - Max：188 W
- Switching Energy：560µJ (on), 320µJ (off)
- Input Type：Standard
- Gate Charge：70 nC
- Td (on/off) @ 25°C：17ns/124ns
- Test Condition：400V, 30A, 13Ohm, 15V
- Reverse Recovery Time (trr)：75 ns
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：PG-TO263-3
- Grade：-
- Qualification：-
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Overview
The IKB30N65ES5ATMA1 is a TRENCHSTOP™ 5 high-speed soft-switching IGBT co-packaged with a full current-rated RAPID 1 fast antiparallel diode. It features a collector-emitter voltage of 650 V and a continuous collector current of 62 A at 25°C case temperature. The device operates within a junction temperature range of -40°C to +175°C. Key electrical parameters include a collector-emitter saturation voltage of 1.35 V, a gate charge of 70 nC, and a maximum power dissipation of 188 W. The component utilizes PG-TO263-3 surface-mount packaging.
Feature Summary
- High-speed smooth switching capability for both hard and soft switching applications
- Co-packaged with a full current-rated RAPID 1 fast and soft antiparallel diode
- Very low collector-emitter saturation voltage at nominal current
- Low gate charge for efficient drive requirements
Applications
- Solar string inverter
- Solar micro inverter
- Industrial SMPS
- Industrial UPS
- Welding equipment
Procurement Notes
Verify the specific ordering suffix ATMA1 against official Infineon documentation to confirm reel packaging specifications. Ensure the procurement channel provides valid traceability for industrial-grade components. Confirm RoHS compliance status through the manufacturer's material content sheets before finalizing orders.
Selection Notes
Select this component for designs requiring integrated fast recovery diodes in a compact surface-mount form factor. Evaluate thermal management strategies based on the specified junction-to-case thermal resistance values. Consider the 650 V breakdown voltage rating relative to system bus voltages and transient overvoltage conditions during operation.
Part Context
This part belongs to the Infineon TRENCHSTOP™ 5 series, designed for high-efficiency power conversion. It integrates an N-channel IGBT with a monolithic antiparallel diode in a single PG-TO263-3 package. The technology targets industrial power supplies and renewable energy systems where space constraints and switching performance are critical design factors.
Replacement Considerations
Consult official Infineon cross-reference guides for verified substitutes. Verify pinout compatibility and thermal characteristics when replacing existing components in established designs.
