IKB40N65EF5ATMA1

$4.41

Description：IGBT TRENCH FS 650V 74A TO263-3
Series：TrenchStop™ 5

SKU:a12cd306f082 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 650V 74A TO263-3
Series：TrenchStop™ 5
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：74 A
Current - Collector Pulsed (Icm)：160 A
Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 40A
Power - Max：250 W
Switching Energy：420µJ (on), 100µJ (off)
Input Type：Standard
Gate Charge：95 nC
Td (on/off) @ 25°C：22ns/160ns
Test Condition：400V, 40A, 15Ohm, 15V
Reverse Recovery Time (trr)：83 ns
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package：PG-TO263-3
Grade：-
Qualification：-

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IKB40N65EF5ATMA1

Overview

The IKB40N65EF5ATMA1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from Infineon Technologies, belonging to the Trenchstop IGBT5 series. It utilizes silicon technology and is housed in a D2PAK-3 (TO-263-3) surface-mount package. The device supports a maximum collector-emitter voltage of 650 V and delivers a continuous collector current of 74 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.6 V, a gate-emitter leakage current of 100 nA, and a power dissipation rating of 250 W. It operates within a temperature range of -40°C to +175°C.

Feature Summary

Incorporates Trenchstop IGBT5 technology for optimized switching performance
Features low collector-emitter saturation voltage for reduced conduction losses
Designed for high thermal stability with an operating junction temperature up to 175°C

Applications

Industrial motor drives
Switched-mode power supplies
High-frequency inverter circuits

Procurement Notes

Verify the complete part number including the ATMA1 suffix to ensure correct packaging configuration. Confirm RoHS compliance status through official manufacturer documentation before integration. Check for any specific REACH SVHC declarations required by your region. Ensure ordering quantities align with standard reel or cut tape availability to avoid supply discrepancies.

Selection Notes

Select this component when a surface-mount IGBT with 650 V blocking capability is required. The TO-263-3 package facilitates automated assembly processes. Consider the 1.6 V saturation voltage for efficiency-critical designs. Evaluate thermal management requirements based on the 250 W dissipation rating under specified operating conditions.

Part Context

This discrete IGBT is part of Infineon's broader Trenchstop family, which focuses on balancing switching speed and conduction efficiency. The EF5 variant specifically denotes the saturation voltage characteristics within the 650 V class. It serves as a standalone switching element distinct from integrated modules or hybrid configurations containing anti-parallel diodes.