IKD04N60RATMA1

Overview

The IKD04N60RATMA1 is a single IGBT with an integrated anti-parallel diode, manufactured by Infineon Technologies. It utilizes TRENCHSTOP™ technology and is housed in a PG-TO252-3 (TO-252-3) surface-mount package. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 8 A at 25°C. Key electrical parameters include a saturation voltage of 1.5 V, a gate charge of 27 nC, and a power dissipation rating of 42 W. It operates within a temperature range of -40°C to 150°C.

Feature Summary

• Integrates an IGBT switch with a fast recovery anti-parallel diode in a single component.
• Utilizes Infineon's TRENCHSTOP™ technology for optimized switching performance.
• Designed for surface-mount installation using the PG-TO252-3 package.

Applications

• E-Forklifts
• E-Scooters
• Induction Heating

Procurement Notes

Verify the specific suffix ATMA1 against official manufacturer documentation to confirm tape-and-reel packaging specifications. Ensure compatibility with standard TO-252 footprint designs. Cross-reference thermal resistance values with the latest datasheet revision for accurate junction temperature calculations under intended load conditions.

Selection Notes

Select this component for applications requiring a compact, high-voltage switching solution with integrated freewheeling capability. The PG-TO252-3 package facilitates automated surface-mount assembly. Consider the 600V rating and 8A current capacity when designing circuits for moderate-power motor drives or inverter topologies where space efficiency is critical.

Part Context

This part belongs to Infineon's discrete IGBT portfolio featuring TRENCHSTOP™ technology. It is specifically engineered for medium-power conversion tasks. The integration of the diode reduces component count and board space compared to discrete solutions. It serves as a core switching element in various industrial and consumer power electronics systems.

Replacement Considerations

IKD04N60RF