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The IKD04N60RFATMA1 is a single N-channel IGBT from Infineon's TRENCHSTOP RC series, housed in a PG-TO252-3 surface-mount package. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 8 A at 25°C. The device exhibits a typical saturation voltage of 1.7 V and supports a power dissipation of 60 W. Operating within a junction temperature range of -40°C to +175°C, it integrates an anti-parallel diode with a reverse recovery time of 190 ns.
Verify the specific suffix ATMA1 against official Infineon documentation to confirm packaging type and tape width specifications. Confirm component status as Not Recommended for New Designs (NRND) prior to procurement planning. Ensure compatibility with existing PCB footprints for the PG-TO252-3 package. Validate thermal management requirements against the 60 W power dissipation rating under intended operating conditions.
Select this component for applications requiring a balance between low conduction loss and controlled switching speed. The integrated diode simplifies circuit design by eliminating external freewheeling components. Consider the NRND status for long-term supply chain stability when designing new products. Evaluate thermal resistance parameters to ensure adequate heat sinking for the TO-252-3 package.
This IGBT belongs to the TRENCHSTOP RC family, which combines trench gate technology with field-stop structures. This architecture reduces charge storage to improve switching efficiency compared to standard planar designs. The RC series targets medium-power applications where efficiency and reliability are critical. The PG-TO252-3 package provides a compact solution for surface-mount assembly.
Official substitutes include IKD06N60RFATMA1 and AIHD03N60RFATMA1. Verify pinout compatibility and electrical parameter margins before substitution. Cross-reference datasheets for differences in saturation voltage and switching energy losses.