SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IKD06N60RC2ATMA1 is a monolithically integrated IGBT with an anti-parallel diode from the TRENCHSTOP RC series, designed for hard switching applications. It features a PG-TO252-3 package and supports a maximum collector-emitter voltage of 600 V. The device operates up to a junction temperature of 175°C and offers short-circuit capability of 3 µs. Key electrical parameters include a collector current of 11.7 A at 25°C, a saturation voltage of 2.0 V, and a gate charge of 31 nC.
Verify the specific suffix ATMA1 against official Infineon documentation to confirm reel packaging specifications. Ensure compliance with JEDEC standards for industrial qualification. Confirm RoHS compliance and lead plating details prior to procurement. Validate that the application does not require automotive AEC-Q101 qualification, as this product is not qualified for such use.
Select this component for cost-effective hard switching designs requiring integrated reverse conduction. The 600V rating and 11.7A continuous current capability suit moderate power levels. Consider the 2.0V saturation voltage and 31nC gate charge for efficiency calculations. Verify thermal management requirements against the 2.9 K/W junction-to-case resistance.
This part belongs to the TRENCHSTOP RC-Series, which integrates an IGBT and a diode to simplify circuit topology. It utilizes silicon technology and is housed in a surface-mount PG-TO252-3 package. The series is optimized for industrial applications operating up to 20 kHz switching frequencies.
IKD06N60RC2
No, the product is not qualified according to AEC-Q100 or AEC-Q101 documents.
The device has a short-circuit withstand time of 3 µs.
No, the electrical characteristics specify 'none' for the integrated gate resistor.