SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IKD06N60RFATMA1 is a single-channel Insulated Gate Bipolar Transistor (IGBT) from Infineon Technologies, utilizing Trenchstop RC technology. It features a TO-252-3 surface-mount package with a maximum collector-emitter voltage of 600 V and a continuous collector current of 12 A at 25°C. The device exhibits a typical saturation voltage of 2.2 V and a power dissipation rating of 100 W. Operating temperatures range from -40°C to +175°C junction temperature. Key switching parameters include a gate charge of 48 nC and a reverse recovery time of 48 ns.
Verify the component status as Not Recommended for New Designs (NRND). Confirm that existing inventory or last-time buy options align with long-term production requirements. Ensure compatibility with current design constraints before finalizing procurement decisions due to potential obsolescence risks.
Select this IGBT for applications requiring 600 V blocking capability and moderate current handling up to 12 A. The TO-252-3 package suits space-constrained PCB designs. Evaluate thermal resistance and heat sinking needs against the 100 W dissipation limit. Consider the NRND status when planning future product lifecycles.
This component belongs to Infineon's Trenchstop family, specifically the RC variant which balances switching speed and conduction losses. It serves as a discrete solution for low-to-medium power conversion stages. The part is distinct from integrated modules like DuoPacks, offering flexibility for custom circuit layouts.
Public confirmed substitute part numbers are not available in the provided documentation. Verify cross-references through official Infineon channels if alternative sourcing is required.
The maximum collector-emitter breakdown voltage (VCEO) is rated at 600 V.
No, this specific part number is a standalone IGBT without an integrated anti-parallel diode.
The device is specified for operation within a junction temperature range of -40°C to +175°C.